English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Asymmetric resistive switching processes were observed in BaTiO 3 /Nb:SrTiO 3  epitaxial heterojunctions. The SET switching time from the high-resistance state to low-resistance state is in the range of 10 ns under + 8 V bias, while the RESET switching time from the low-resistance state to high-resistance state is in the range of 10 5  ns under − 8 V bias. The ferroelectric polarization screening controlled by electrons and oxygen vacancies at the BaTiO 3 /Nb:SrTiO 3  heterointerface is proposed to understand this switching time difference. This switch with fast SET and slow RESET transition may have potential applications in some special regions.

Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions