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Semiconductor strontium digermanide (SrGe 2 ) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe 2  thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe 2  dramatically changed depending on the growth temperature (300−700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe 2  using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe 2  to high-efficiency thin-film solar cells.

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates