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Pt/Nd:SrTiO 3  (STO)/In devices were fabricated by depositing Schottky-contact Pt and Ohmic-contact In electrodes on a single crystal STO with Nd doping. The Pt/Nd:STO/In devices show multi-level resistance-switching (RS) memory and memory-state-dependent photovoltage (PV) effects, which can be controlled by the applied pulse width or magnitude. Both the RS and PV are related to the bias-induced modulation of the interface barrier, both in height and width, at the Pt/Nd:STO interface. The results establish a strong connection between the RS/PV effects and the modulation of the Nd:STO interface triggered by applied electric field and provide a new route by using an open-circuit voltage for non-destructively sensing multiple non-volatile memory states.   Electronic supplementary material  The online version of this article (10.1186/s11671-018-2433-5) contains supplementary material, which is available to authorized users.

Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions