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We fabricated the black silicon (BS) structures by using nanosecond pulsed laser (ns-laser) in vacuum or in oxygen environment. It is interesting that the enhanced visible emission occurs in the photoluminescence (PL) spectra measured at room temperature and at lower temperature on the BS surface after annealing, in which lasing near 600 nm is observed on the BS surface with Purcell cavity structure. It is demonstrated in the PL spectra analysis that the electronic states in the nanocrystal doped with oxygen play a main role in the visible emission on the BS surface. The origin of the visible emission near 400, 560, or 700 nm is univocally revealed in the PL spectra analysis. A visible emission is promising for the development of the white light device on the BS.

Electronic States of Nanocrystal Doped with Oxygen and Visible Emission on Black Silicon Prepared by ns-Laser