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Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al 2 O 3 /GaN MOS devices. By featuring only one single peak in the parallel conductance ( G   p /ω) characteristics in the deep depletion region, one single-level bulk trap ( E   C -0.53 eV) uniformly distributed in GaN buffer was identified. While in the subthreshold region, the interface traps with continuous energy of  E   C -0.4~0.57 eV and density of 0.6~1.6 × 10 12  cm −2  were extracted from the commonly observed multiple  G   p /ω peaks. This methodology can be used to investigate the traps in GaN buffer and facilitates making the distinction between bulk and interface traps.

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device