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Based on time-resolved electroluminescence (TREL) measurement, more efficient carrier injection, transport, relaxation, and recombination associated with a stronger carrier localization and a low polarization effect in a nonpolar  m -plane InGaN/GaN light emitting diode ( m -LED), compared with those in a polar  c -LED, are reported. With a higher applied voltage in the  c -LED, decreasing response time and rising time improve device performance, but a longer recombination time degrades luminescence efficiency. By using an  m -LED with a stronger carrier localization and a low polarization effect, shorter response, rising, and recombination times provide more efficient carrier injection, transport, relaxation, and recombination. These advantages can be realized for high-power and high-speed flash LEDs. In addition, with a weaker carrier localization and a polarization effect in the  c -LED, the slower radiative and faster nonradiative decay rates at a larger applied voltage result in the slower total decay rate and the lower luminescence efficiency. For the  m -LED at a higher applied voltage, a slow decreasing nonradiative decay rate is beneficial to device performance, while the more slowly decreasing and overall faster radiative decay rate of the  m -LED than that of the  c -LED demonstrates that a stronger carrier localization and a reduced polarization effect are efficient for carrier recombination. The resulting recombination dynamics are correlated with the device characteristics and performance of the  c - and  m -LEDs.

nanoscale research letters

Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes