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In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH 4  and B 2 H 6  precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the performance of devices featuring ALD W using SiH 4  is superior to that of devices featuring ALD W using B 2 H 6 . This disparity in device performance results from different metal gate-induced strain from ALD W using SiH 4  and B 2 H 6  precursors, i.e. tensile stresses for SiH 4  (~2.4 GPa) and for B 2 H 6  (~0.9 GPa).

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology