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Although CdS and PbS quantum dot-sensitized TiO 2  nanotube arrays (TNTAs/QDs) show photocatalytic activity in the visible-light region, the low internal quantum efficiency and the slow interfacial hole transfer rate limit their applications. This work modified the surface of the TNTAs/QDs photoelectrodes with metal-oxide overlayers by atomic layer deposition (ALD), such as coating Al 2 O 3 , TiO 2 , and ZnO. The ALD deposition of all these overlayers can apparently enhance the photoelectrochemical performance of the TNTAs/QDs. Under simulated solar illumination, the maximum photocurrent densities of the TNTAs/QDs with 10 cycles ZnO, 25 cycles TiO 2 , and 30 cycles Al 2 O 3  overlayers are 5.0, 4.3, and 5.6 mA/cm 2  at 1.0 V (vs. SCE), respectively. The photoelectrode with Al 2 O 3  overlayer coating presents the superior performance, whose photocurrent density is 37 times and 1.6 times higher than those of the TNTAs and TNTAs/QDs, respectively. Systematic examination of the effects of various metal-oxide overlayers on the photoelectrochemical performance indicates that the enhancement by TiO 2  and ZnO overcoatings can only ascribed to the decrease of the interfacial charge transfer impedance, besides which Al 2 O 3  coating can passivate the surface states and facilitate the charge transfer kinetics. These results could be helpful to develop high-performance photoelectrodes in the photoelectrochemical applications.

Photoelectrochemical Performance of Quantum dot-Sensitized TiO2 Nanotube Arrays: a Study of Surface Modification by Atomic Layer Deposition Coating