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A comparative study of different sequences of two metal precursors [trimethylaluminum (TMA) and Tris(isopropylcyclopentadienyl) lanthanum (La( i PrCp) 3 )] for atomic layer deposition (ALD) lanthanum aluminum oxide (La x Al y O) films is carried out. The percentage compositions of C and N impurity of La x Al y O films were investigated using in situ X-ray photoelectron spectroscopy (XPS). The effects of different oxidants on the physical and chemical properties and electrical characteristics of La x Al y O films are studied before and after annealing. Preliminary testing results indicate that the impurity level of La x Al y O films grown with different oxidants can be well controlled before and after annealing. Analysis indicates the rapid thermal annealing (RTA) and kinds of oxidants have significant effects on the equivalent oxide thickness (EOT), dielectric constant, electrical properties, and stability of La x Al y O films. Additionally, the change of chemical bond types of rapid thermal annealing effects on the properties of La x Al y O films are grown with different oxidants also investigated by XPS.

Effects of Rapid Thermal Annealing and Different Oxidants on the Properties of LaxAlyO Nanolaminate Films Deposited by Atomic Layer Deposition