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Structural analysis of self-catalyzed GaAs nanowires (NWs) grown onlithography-free oxide patterns is described with insight on their growthkinetics. Statistical analysis of templates and NWs in different phases of thegrowth reveals extremely high dimensional uniformity due to a combination ofuniform nucleation sites, lack of secondary nucleation of NWs, andself-regulated growth under the effect of nucleation antibunching.Consequently, we observed the first evidence of sub-Poissonian GaAs NW lengthdistributions. The high phase purity of the NWs is demonstrated usingcomplementary transmission electron microscopy (TEM) and high-resolution x-raydiffractometry (HR-XRD). It is also shown that, while NWs are to large extentdefect-free with up to 2 um long twin-free zincblende segments, low temperaturemicro-photoluminescence spectroscopy reveals that the proportion ofstructurally disordered sections can be detected from their spectralproperties.

Structural investigation of uniform ensembles of self-catalyzed GaAs nanowires fabricated by a lithography-free technique