English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Using photo-luminescence, infrared spectroscopy, and electron spin resonance technique, the silicon dioxide films with embedded silicon nanocrystals (nc-Si/SiO 2  structures) have been investigated after  γ -irradiation with the dose 2 × 10 7  rad and subsequent annealing at 450 °C in hydrogen ambient. For the first time, it was shown that such a radiation-thermal treatment results in significant increase of the luminescence intensity, in a red shift of the photoluminescence spectra, and in disappearance of the electron-spin resonance signal related to silicon broken bonds. This effect has been explained by passivation of silicon broken bonds at the nc-Si–SiO 2  interface with hydrogen and by generation of new luminescence centers, these centers being created at elevated temperatures due to transformation of radiation-induced defects.

Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO2 Structures