English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The resistive switching characteristics of the Cu/SiO  x  /Pt structure (control sample) exhibited a direct correlation to humidity. The H 2 O vapor formed the Cu oxide at the Cu/SiO  x   interface, and Cu ions were injected from the Cu oxide into the SiO  x   layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environment. The Cu  x  O layer in the Cu/Cu  x  O/SiO  x  /Pt structure (Cu  x  O sample) helped the dissolution of Cu ions from the Cu electrode into the SiO  x   layer, enabling effective electrochemical resistive switching in a vaporless environment. The Cu  x  O sample exhibited low switching dispersion and favorable endurance characteristics in a vaporless environment.

Effects of a Cu x O Buffer Layer on a SiO x -Based Memory Device in a Vaporless Environment