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Sn-doped In 2 O 3  nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H 2 S between 300 to 600 °C. We observe the existence of cubic bixbyite In 2 O 3  and hexagonal SnS 2  after processing the Sn:In 2 O 3  nanowires to H 2 S at 300 °C but also cubic bixbyite In 2 O 3 , which remains dominant, and the emergence of rhombohedral In 2 (SO 4 ) 3  at 400 °C. The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In 2 O 3 . In contrast, Sn:In 2 O 3  nanowires grown on glass at 500 °C can be treated under H 2 S only below 200 °C which is important for the fabrication of Cu 2 S/Sn:In 2 O 3  core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells.

Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires