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The article presents an experimental study of an issue of whether theformation of arrays of Ge quantum dots on the Si(001) surface is an equilibriumprocess or it is kinetically controlled. We deposited Ge on Si(001) at the roomtemperature and explored crystallization of the disordered Ge film as a resultof annealing at 600 {\deg}C. The experiment has demonstrated that theGe/Si(001) film formed in the conditions of an isolated system consists of thestandard patched wetting layer and large droplike clusters of Ge rather than ofhuts or domes which appear when a film is grown in a flux of Ge atoms arrivingon its surface. We conclude that the growth of the pyramids appearing attemperatures greater than 600 {\deg}C is controlled by kinetics rather thanthermodynamic equilibrium whereas the wetting layer is an equilibriumstructure.

nanoscale research letters

Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid  Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed  by Ge Deposition at Room Temperature Followed by Annealing at 600 {\deg}C