English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al 2 O 3 /HfO 2 /Al 2 O 3 -based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al 2 O 3 /HfO 2 /Al 2 O 3  on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al 2 O 3 /HfO 2 /Al 2 O 3  after 600°C post-annealing. The memory units of Pt/Al 2 O 3 /HfO 2 /Al 2 O 3 /TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10 3  cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al 2 O 3 /HfO 2 /Al 2 O 3  has been proposed. The trilayer structure device units of Al 2 O 3 /HfO 2 /Al 2 O 3  on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications