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Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [−12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al 2 O 3  thin film is deposited on the m-plane ZnO thin films. It is interesting to observe the near-infrared random lasing from the metal-insulator-semiconductor devices.

Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices