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In order to obtain a good passivation of a silicon surface, more and more stack passivation schemes have been used in high-efficiency silicon solar cell fabrication. In this work, we prepared a-Si:H(i)/Al 2 O 3  stacks on KOH solution-polished n-type solar grade mono-silicon(100) wafers. For the Al 2 O 3  film deposition, both thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) were used. Interface trap density spectra were obtained for Si passivation with a-Si films and a-Si:H(i)/Al 2 O 3  stacks by a non-contact corona C-V technique. After the fabrication of a-Si:H(i)/Al 2 O 3  stacks, the minimum interface trap density was reduced from original 3 × 10 12  to 1 × 10 12  cm −2  eV −1 , the surface total charge density increased by nearly one order of magnitude for PE-ALD samples and about 0.4 × 10 12  cm −2  for a T-ALD sample, and the carrier lifetimes increased by a factor of three (from about 10 μs to about 30 μs). Combining these results with an X-ray photoelectron spectroscopy analysis, we discussed the influence of an oxidation precursor for ALD Al 2 O 3  deposition on Al 2 O 3  single layers and a-Si:H(i)/Al 2 O 3  stack surface passivation from field-effect passivation and chemical passivation perspectives. In addition, the influence of the stack fabrication process on the a-Si film structure was also discussed in this study.

Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks