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According to first-principles calculations, the solubility of Mg as a substitute for Ga or Al in Al   x   Ga 1  – x   N bulk is limited by large, positive formation enthalpies. In contrast to the bulk case, the formation enthalpies become negative on Al   x   Ga 1  – x   N surface. In addition, the N-rich growth atmosphere can also be favorable to Mg incorporation on the surface by changing the chemical potentials. On the basis of these special features, we proposed a modified surface engineering technique that applies periodical interruptions under an ultimate V/III ratio condition (extremely N-rich), to enhance Mg effective incorporation. By optimizing the interruption conditions (2 nm interruption interval with 2 s interruption time), the enhancement ratio can be up to about 5 in the Al 0.99 Ga 0.01 N epilayer.

High Mg effective incorporation in Al-rich Al x Ga1 - xN by periodic repetition of ultimate V/III ratio conditions