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In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the ‘one-pot procedure’ metal-assisted chemical etching (MACE) method in the HF/H 2 O 2 /AgNO 3  system at room temperature. The effects of H 2 O 2  concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced by the addition of H 2 O 2  and the pore structure could be controlled by adjusting the concentration of H 2 O 2 . The H 2 O 2  species replaces Ag +  as the oxidant and the Ag nanoparticles work as catalyst during the etching. And the concentration of H 2 O 2  influences the nucleation and motility of Ag particles, which leads to formation of different porous structure within the nanowires. A mechanism based on the lateral etching which is catalyzed by Ag particles under the motivation by H 2 O 2  reduction is proposed to explain the PSiNWs formation.

Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature