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A three-dimensional selenium solar cell with the structure of Au/Se/porous TiO 2 /compact TiO 2 /fluorine-doped tin oxide-coated glass plates was fabricated by an electrochemical deposition method of selenium, which can work for the extremely thin light absorber and the hole-conducting layer. The effect of experimental conditions, such as HCl and H 2 SeO 3  in an electrochemical solution and TiO 2  particle size of porous layers, was optimized. This kind of solar cell did not use any buffer layer between an n-type electrode (porous TiO 2 ) and a p-type absorber layer (selenium). The crystallinity of the selenium after annealing at 200°C for 3 min in the air was significantly improved. The cells with a selenium layer deposited at concentrations of HCl = 11.5 mM and H 2 SeO 3  = 20 mM showed the best performance, resulting in 1- to 2-nm thickness of the Se layer, short-circuit photocurrent density of 8.7 mA/cm 2 , open-circuit voltage of 0.65 V, fill factor of 0.53, and conversion efficiency of 3.0%.

3-D solar cells by electrochemical-deposited Se layer as extremely-thin absorber and hole conducting layer on nanocrystalline TiO2 electrode