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The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of  c  (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semiconducting character with a band gap of approximately 0.85 eV. Compared with elemental Fe, the Fe 2 p  peaks of the film exhibit a lower spin-orbit splitting (−0.3 eV) and the Fe 2 p  3/2  level has a smaller full-width at half maximum (−0.6 eV) and a higher binding energy (+0.3 eV). Quantitative XPS analysis shows that the  c  (4 × 8) phase is in the FeSi 2  stoichiometry regime. The  c  (4 × 8) pattern could result from the ordered arrangement of defects of Fe vacancies in the buried Fe layers.

Homogeneous crystalline FeSi2 films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy