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We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga 2 O 3  NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga 2 O 3  NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga 2 O 3  films (current level 9.9 × 10 -9  A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga 2 O 3  NP/SWNT increased by approximately 4 × 10 5  times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10 -4  A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga 2 O 3  NPs and high conductivity and effective current spreading of SWNTs.

nanoscale research letters

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes