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We have performed magnetotransport measurements on multilayer epitaxial graphene. By increasing the driving current  I  through our graphene devices while keeping the bath temperature fixed, we are able to study Dirac fermion heating and current scaling in such devices. Using zero-field resistivity as a self thermometer, we are able to determine the effective Dirac fermion temperature ( T  DF ) at various driving currents. At zero field, it is found that  T  DF  ∝  I  ≈1/2 . Such results are consistent with electron heating in conventional two-dimensional systems in the plateau-plateau transition regime. With increasing magnetic field  B , we observe an  I -independent point in the measured longitudinal resistivity  ρ  xx  which is equivalent to the direct insulator-quantum Hall (I-QH) transition characterized by a temperature-independent point in  ρ  xx . Together with recent experimental evidence for direct I-QH transition, our new data suggest that such a transition is a universal effect in graphene, albeit further studies are required to obtain a thorough understanding of such an effect.

Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene