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We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si 3 N 4  layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs ‘explode,’ regressing back almost to their origins as individual Ge nuclei as formed during the oxidation of the original nanopatterned SiGe structures used for their generation. A kinetics-based model is proposed to explain the anomalous migration behavior and morphology changes of the Ge QDs based on the Si flux generated during the oxidation of Si-containing layers.

The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation