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In this letter, we investigated the structural and electrical characteristics of high- κ  Er 2 O 3  and Er 2 TiO 5  gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er 2 O 3  dielectric, the a-IGZO TFT device incorporating an Er 2 TiO 5  gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm 2 /Vs, a small subthreshold swing of 143 mV/decade, and a high  I  on / I  off  current ratio of 4.23 × 10 7 , presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er 2 TiO 5  film. Furthermore, the reliability of voltage stress can be improved using an Er 2 TiO 5  gate dielectric.

Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors