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Low-frequency flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire (diameter approximately 50 nm). Measurement was done with an alternating current (ac) excitation for the noise measurement superimposed with direct current (dc) bias that can be controlled independently. The observed noise has a spectral power density ∝1/ f   α  . Application of the superimposed dc bias (retaining the ac bias unchanged) with a value more than the Schottky barrier height at the junction leads to a large suppression of the noise amplitude along with a change of  α  from 2 to ≈ 1. The dc bias-dependent part of the noise has been interpreted as arising from the interface region. The residual dc bias-independent flicker noise is suggested to arise from the single strand of Si nanowire, which has the conventional 1/ f  spectral power density.

Low-frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm)