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ZnO/Al 2 O 3  multilayers were prepared by alternating atomic layer deposition (ALD) at 150°C using diethylzinc, trimethylaluminum, and water. The growth process, crystallinity, and electrical and optical properties of the multilayers were studied with a variety of the cycle ratios of ZnO and Al 2 O 3  sublayers. Transparent conductive Al-doped ZnO films were prepared with the minimum resistivity of 2.4 × 10 −3  Ω·cm at a low Al doping concentration of 2.26%. Photoluminescence spectroscopy in conjunction with X-ray diffraction analysis revealed that the thickness of ZnO sublayers plays an important role on the priority for selective crystallization of ZnAl 2 O 4  and ZnO phases during high-temperature annealing ZnO/Al 2 O 3  multilayers. It was found that pure ZnAl 2 O 4  film was synthesized by annealing the specific composite film containing alternative monocycle of ZnO and Al 2 O 3  sublayers, which could only be deposited precisely by utilizing ALD technology.

Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition