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We have performed magnetotransport measurements on gated GaAs two-dimensional electron gases in which electrons are confined in a layer of the nanoscale. From the slopes of a pair of spin-split Landau levels (LLs) in the energy-magnetic field plane, we can perform  direct  measurements of the spin gap for different LLs. The measured  g -factor  g  is greatly enhanced over its bulk value in GaAs (0.44) due to electron–electron (e-e) interactions. Our results suggest that both the spin gap and  g  determined from conventional activation energy studies can be very different from those obtained by direct measurements.

Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas