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Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga  x  In 1 −  x  N  y  As 1 −  y  /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga 1 −  x  In  x  N  y  As 1 −  y  /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.

Effects of an intense, high-frequency laser field on bound states in Ga1 − xIn x N y As1 − y/GaAs double quantum well