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For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolutionand its temperature dependence were studied using reflectance differencespectroscopy (RDS) and analyzed with a rate equation model. The WL thicknessesshowed a monotonic increase at relatively low growth temperatures but a firstincrease and then decrease at higher temperatures, which were unexpected fromthe thermodynamic understanding. By adopting a rate equation model, thetemperature dependence of QD growth was assigned as the origin of different WLevolutions. A brief discussion on the indium desorption was also given. Thoseresults gave hints of the kinetic aspects of QD self-assembly.

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots