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Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga 1− x  In  x  N  y  As 1− y  /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.

The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xIn x N y As1−y/GaAs quantum well