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Issues of Ge hut array formation and growth at low temperatures on theGe/Si(001) wetting layer are discussed on the basis of explorations performedby high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayerGe/Si heterostructures are presented with the focus on low-temperatureformation of perfect films. Heteroepitaxial Si p-i-n-diodes with multilayerstacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains havebeen investigated and found to exhibit the photo-emf in a wide spectral rangefrom 0.8 to 5 mcm. An effect of wide-band irradiation by infrared light on thephoto-emf spectra has been observed. Photo-emf in different spectral ranges hasbeen found to be differently affected by the wide-band irradiation. Asignificant increase in photo-emf is observed in the fundamental absorptionrange under the wide-band irradiation. The observed phenomena are explained interms of positive and neutral charge states of the quantum dot layers and theCoulomb potential of the quantum dot ensemble. By using a coherent sourcespectrometer, first measurements of terahertz dynamical conductivity(absorptivity) spectra of Ge/Si(001) heterostructures were performed atfrequencies 0.3-1.2 THz in the temperature interval from 300 to 5 K. Theeffective dynamical conductivity of the heterostructures with Ge quantum dotshas been discovered to be significantly higher than that of the structure withthe same amount of bulk germanium (not organized in an array of quantum dots).The excess conductivity is not observed in the structures with the Ge coverageless than 8 \AA. When a Ge/Si(001) sample is cooled down the conductivitydecreases. We discuss possible mechanisms that can be responsible for theobserved effects.

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity