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Since the photoelectric response and charge carriers transport can be influenced greatly by the density and spacing of the ZnO nanorod arrays, controlling of these geometric parameters precisely is highly desirable but rather challenging in practice. Here, we fabricated patterned ZnO nanorod arrays with different densities and spacing distances on silicon (Si) substrate by electron beam lithography (EBL) method combined with the subsequent hydrothermal reaction process. By using the EBL method, patterned ZnO seed layers with different areas and spacing distances were obtained firstly. ZnO nanorod arrays with different densities and various morphologies were obtained by the subsequent hydrothermal growth process. The combination of EBL and hydrothermal growth process was very attractive and could make us control the geometric parameters of ZnO nanorod arrays expediently. Finally, the vertical transport properties of the patterned ZnO nanorod arrays were investigated through the microprobe station equipment, and the I-V measurement results indicated that the back-to-back Schottky contacts with different barrier heights were formed in dark conditions. Under UV light illumination, the patterned ZnO nanorod arrays showed a high UV light sensitivity, and the response ratio was about 10 4 . The controllable fabrication of patterned ZnO nanorod arrays and understanding their photoelectric transport properties were helpful to improve the performance of nanodevices based on them.

Controllable growth of ZnO nanorod arrays with different densities and their photoelectric properties