English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

In this paper, we have investigated the electrical properties of TiAl 3 O  x   film as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl 3 O  x  /Si interfacial region in detail. The TiAl 3 O  x   films show obvious electrical hysteresis by the capacitance-voltage measurements after post-annealing treatment. By virtue of the diffusion models composed of TiAl 3 O  x   film and silicon, the diffusion coefficient and the diffusion activation energy of the Ti and Al atoms are extracted. It is valuable to further investigate the pseudobinary oxide system in practice.   PACS:  77.55.-g; 81.15.Fg; 81.40.Gh.

Characterization upon electrical hysteresis and thermal diffusion of TiAl3O x dielectric film