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The band alignment of ZrO 2 /interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N 2 O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO 2 /Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO 2 /interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10 -6  A/cm 2 .

Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si