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In this study, a wide range of a-SiN   x   :H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH 3  and SiH 4 . The silicon-rich a-SiN  x  :H films (SRSN) were sandwiched between a bottom thermal SiO 2  and a top Si 3 N 4  layer, and subsequently annealed within the temperature range of 500-1100°C in N 2  to study the effect of annealing temperature on light-emitting and charge storage properties. A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C. The possible origins of the PL are briefly discussed. The authors have succeeded in the formation of amorphous Si quantum dots with an average size of about 3 to 3.6 nm by varying excess amount of Si and annealing temperature. Electrical properties have been investigated on Al/Si 3 N 4 /SRSN/SiO 2 /Si structures by capacitance-voltage and conductance-voltage analysis techniques. A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiN x :H films