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In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al 2 O 3 -based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al 2 O 3  layers have been also analyzed.

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics