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Single-crystal, Cu-doped In  x  Ga 1 -  x  N nanowires were grown on GaN/Al 2 O 3  substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In  x  Ga 1 -  x  N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation magnetic moments higher than 0.8 μ B  (1 μ B  × 10 -24  Am 2 ) per Cu atom at room temperature by the measurements using a superconducting quantum interference device (SQUID) magnetometer. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu  L  2,3 -edges indicated that the doped Cu had a local magnetic moment and that its electronic configuration was mainly 3 d  9 . It possessed a small trivalent component, and thus, the n-type behavior of electrical property is measured at room temperature.

Magnetic In x Ga1 - xN nanowires at room temperature using Cu dopant and annealing