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Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generatesvoltage proportional to magnetization across a current carrying magnetic film.Magnitude of the effect can be artificially increased by stimulating properlyselected spin-orbit scattering events. Already achieved sensitivity of theEHE-based sample devices exceeds 1000 Ohm/T, which surpasses the sensitivity ofsemiconducting Hall sensors. Linear field response, thermal stability, highfrequency operation, sub-micron dimensions and, above all, simplicity,robustness and low cost manufacture are good reasons to consider a wide scaletechnological application of the phenomenon for magnetic sensors and memorydevices.

Perspective of Spintronics Applications Based on the Extraordinary Hall Effect