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ZnO thin films have been prepared by dip coating sol gel method using Taguchi technique. The underlying principle was to make something as little as conceivable the measure of examination and make sense of the best conditions for developing ZnO thin films with great properties. We used a trial plan of L9, with three levels (high, medium, low) and four elements (annealing temperature, precursor concentration, dip coating speed, annealing time). For each paper three sol-gel arrangements were arranged, and test is rehashed three time. We have chosen to carry out the optimization based on the gap energy calculated from the transmittance of the films obtained. Each sample was characterized with spectrophotometer. This characterization allowed us to draw the transmittance curve and to deduce the gap energy of each deposited ZnO thin film. A signal to noise and an analysis of variance (ANOVA) were used to determine the optical and electrical properties. The film that we obtained with the optimal condition was exanimated by using the characterization methods like UV-visible spectroscopy, X-ray diffraction, SEM (Scanning Electron Microscopy) and EDS (Energy Dispersive Spectroscopy). With the legal statement under oath condition, ZnO thin film showed high crystal quality and the transmittance is a greater amount of 90%.

The Use of Taguchi Method to Elaborate Good ZnO Thin Films by Sol Gel Associated to Dip Coating