Open AccessModeling and Characterization of Inconsistent Behavior of Gate Leakage Current with Threshold Voltage for Nano MOSFETs
Author(s) -
Yashu Swami
Publication year - 2018
Publication title -
american journal of modern physics
Language(s) - English
Resource type - Journals
eISSN - 2326-8891
pISSN - 2326-8867
DOI - 10.11648/j.ajmp.20180704.14
Subject(s) - threshold voltage , drain induced barrier lowering , reverse short channel effect , leakage (economics) , materials science , negative bias temperature instability , voltage , optoelectronics , overdrive voltage , time dependent gate oxide breakdown , mosfet , gate oxide , electrical engineering , transistor , engineering , macroeconomics , economics
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