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A systematic characterization of Molecular Beam Epitaxy GaAs layers grown on (311)A oriented substrates and doped with Silicon was developed to understand the mechanisms of Silicon incorporation into the film. The (311)A surface has an amphoteric behavior for Silicon, in other words, it can occupy the Ga and/or As sites, which results in films with n and p behavior, respectively. The electric characteristic of the films depends, basically, on the following growth conditions: i) ratio between the Ga and As flux; and ii) temperature of the substrate. The characterization techniques used were Photoluminescence, IxV and Hall effect. From the grown films, we studied the electrical characteristics of MetalSemiconductor junctions obtained from the sequential deposition of AuGe/Ni and Au/Zn/Au for n and p respectively. The contact resistivity was studied as function of the temperature and time of thermal annealing, using a home made RTA(Rapid Thermal Annealing) system. The ideal conditions for the ohmic contact were fixed for both n and p types. X-Ray diffraction technique was used to verify the evolution of the interface microstructure, showing the formation of the AuGa phase, responsible for the ohmic behavior. The work served as base for the development of p-n junctions based on surface (311)A and its application in optoelectronics devices. Cap.1-Introdução  1

"Propriedades ópticas e elétricas de filmes epitaxiais de GaAs:Si crescidos na superfície (311)A"