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TiO2 and N-doped TiO2 (N:TiO2) thin films, and TiO2/N:TiO2 multilayered films were grown on AISI 316 steel substrates, and Si (100) by using metallorganic chemical vapor deposition (MOCVD) technique. The growth of the films was carried out at 400 and 500°C, and films with different thicknesses and structures were obtained. Titanium dioxide films were produced by using only titanium isopropoxide IV as both titanium and oxygen sources. In order to obtain N:TiO2 films, NH3 was also added to the system. The films were characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) The corrosion resistance was evaluated by potentiodynamic polarization tests in a 3.5wt% NaCl electrolyte. TiO2 undoped films, grown at 400oC, presented anatase, while those grown at 500oC showed the rutile phase, besides anatase. For nitrogendoped films (7.29 and 8.29 at% at 400 and 500oC, respectively), at both temperatures, TiO2 anatase was formed, as well as nitrogen-containing phases. TiO2 films grown at 400°C provided better protection against corrosion than those grown at 500°C. Films grown at 500°C showed a columnar structure, which represents a high level of porosity, while the films grown at 400°C presented a denser structure. Doping was not efficient to protect the substrate against corrosion, probably due to the formation of nitrogen containing phases. The corrosion results for tests with multilayered films suggest that those with more interfaces present better resistance to corrosion. The corrosion of the samples starts at the surface of the films, which is in contact with the aggressive medium, causing pitting in this film, which allows the corrosive medium to reach the metallic substrate. The metal is attacked and dissolved under the film, and results in film delamination.

Caracterização de filmes de TiO&lt;sub&gt;2&lt;/sub&gt;, N:TiO&lt;sub&gt;2&lt;/sub&gt; e TiO&lt;sub&gt;2&lt;/sub&gt;/N:TiO&lt;sub&gt;2&lt;/sub&gt; obtidos por deposição química de organometálicos em fase vapor