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The goal of the present work was to upgrade the home-made Scanning Tunneling Microscope present in our group, adding a new hardware necessary to carry out spectroscopic measurements. A new software was also developed to control the new functions of the microscope. In order to check the performance of the whole system, several types of experiments where carried out on graphite and gold. A special care was taken to adequately prepare the samples of III-V semiconductors. The passivation of the sample yielded the best results both for topographic and spectroscopic measurements. Finally, I-V curves were taken on GaAs layers and InAs quantum dots grown by molecular beam epitaxy (MBE).

Espectroscopia a Nível Atômico Usando um Microscópio de Tunelamento (STM)