Open AccessA Comparative Study on Optical Characteristics of InGaAsP QW Heterostructures of Type-I and Type-II Band Alignments
Author(s) -
Garima Bhardwaj,
Sandhya Kattayat,
Richa Dolia,
M. Abu-Samak,
Shalendra Kumar,
P. A. Alvi
Publication year - 2018
Publication title -
bulletin of electrical engineering and informatics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.251
H-Index - 12
ISSN - 2302-9285
DOI - 10.11591/eei.v7i1.872
Subject(s) - heterojunction , quantum well , optoelectronics , wavelength , materials science , hamiltonian (control theory) , electronic band structure , photonics , infrared , optics , physics , condensed matter physics , laser , mathematics , mathematical optimization
In this paper, we have configured InGaAsP QW (quantum well) heterostructures of type-I and type-II band alignments and simulated their optical characteristics by solving 6 x 6 Kohn-Luttinger Hamiltonian Matrix. According to the simulation results, the InGaAsP QW heterostructure of type-I band alignment has been found to show peak optical gain (TE mode) of the order of~3600/cm at the transition wavelength~1.40 µm; while of type-II band alignment has achieved the peak gain (TE mode) of the order of~7800/cm at the wavelength of~1.85 µm (eye safe region). Thus, both of the heterostructures can be utilized in designing of opto-or photonic devices for the emission of radiations in NIR (near infrared region) but form the high gain point of view, the InGaAsP of type-II band alignment can be more preferred.
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