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The advanced manufacturing of ultra-thin-film devices, especially the nano-semiconductor products, has drawn a significant research interest over the past decades. In this field, monitoring the properties and thickness of the semiconductor layers is of paramount importance, which has significant impact on the device quality. In this study, an in situ monitoring scheme for manufacturing of nanodevices has been proposed, which is able to accurately analyse the optical absorption properties of the semiconductor layers of varying thickness in nanodevices. The in situ reflectance spectral analysis of monolayer, bilayer, and bulk-phase samples confirms the practicability and reliability of the monitoring scheme. The findings reported in this study form the basis for the advanced manufacturing of nano- and sub-nanodevices in the future.

An In Situ Spectral Monitoring Scheme for Advanced Manufacturing of Novel Nanodevices