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This paper presents the development and evaluation of a large-signal equivalent circuit model that accounts for the power supply fluctuation and temperature variation of I/O buffers circuit designed based on the fully depleted silicon on insulator (FDSOI) 28 nm process for signal-power integrity (SPI) simulation. A solid electrical analysis based on the working mechanisms of the nominal I/O buffer information specification- (IBIS-) like model is presented to support the derivation of an accurate and computationally efficient behavioral model that captures the essential effects of the power supply bouncing under temperature variation. The formulation and extraction of the Lagrange interpolating polynomial are investigated to extend the nominal equivalent circuit model. The generated behavioral model is implemented using the Newton-Neville’s formula and validated in simultaneous switching output buffers (SSO) scenario under temperature variation. The numerical results show a good prediction accuracy of the time domain voltage and current waveforms as well as the eye diagram of the high-speed communication I/O link while speeding-up the transient simulation compared to the transistor level model.

Power Supply- and Temperature-Aware I/O Buffer Model for Signal-Power Integrity Simulation