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The rate of oxide formation during growth of pores structures on silicon was investigated by in situ I-V measurements. The measurements were designed to get two I-V curves in a short time (total time for the two measurements was 300 seconds) taking into account the gap (in mA/cm2) for each corresponding voltage. The in situ I-V measurements were made at different pore depth/time, at the electrolyte-pore tip interface, while etching takes place based on p-type Si. The results showed increasing, decreasing, and constant I-V gap in time, for macropores, nanopores, and electropolishing regimes, respectively. This was related to the expected diffusion limitation of oxide forming (H2O) molecules reaching the electrolyte-pore tip and the anodizing current, while etching takes place. The method can be developed further and has the potential to be applied in other electrochemically etched porous semiconductor materials

Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon