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This work describes the analysis of morphology and electrical resistivity (ρ) obtained in the Au/Cu/Si system. The Au/Cu bilayers were deposited by thermal evaporation technique with thicknesses from 50 to 250 nm on SiOx/Si(100) substrates. The Au : Cu concentration ratio of the samples was of 25 : 75 at%. The bilayers were annealed into a vacuum oven with argon atmosphere at 660 K for one hour. The crystalline structures of AuCu and CuSi alloys were confirmed by X-ray diffraction analysis. The scanning electron microscopy (SEM), the atomic force microscopy (AFM), and the energy dispersive spectroscopy (EDS) were used to study the morphology, final thickness, and the atomic concentration of the alloys formed, respectively. The four-point probe technique was used to measure the electrical resistivity (ρ) in the prepared alloys as a function of thickness. The ρ value was measured and it was numerically compared with the Fuchs–Sondheimer (FS) and the Mayadas–Shatzkes (MS) models of resistivity. Results show values of electrical resistivity between 0.9 and 1.9 μΩ-cm. These values are four times smaller than the values of the AuCu systems reported in literature.

Surface Morphology and Electrical Resistivity in Polycrystalline Au/Cu/Si(100) System