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We have studied the effect of the surface treatment of the CdS/CdSe quantum dots (QDs) by passivation ZnS layers and annealing temperature on the recombination resistance of the quantum dots solar cells (QDSSCs) based on TiO2/CdS/CdSe/ZnS photoanodes. The recombination resistance at TiO2/QDs contact and in TiO2 film decreased when the QDs were added to the passivation ZnS layers. Furthermore, we used the F− ions linker and found the best annealing temperature conditions to reduce the recombination resistance of the QDSSCs. As a result, the current density increased from 7.85 mA/cm2 to 14 mA/cm2

Influence of Surface Treatment and Annealing Temperature on the Recombination Processes of the Quantum Dots Solar Cells